摘要
报道用开管汽相外延法生长长波碲镉汞晶膜的结果。实验表明,用这种方法容易得到适合红外焦平面列阵器件制备用的大面积均匀优质碲镉汞晶膜。
The Growth of long IR wave length MCT crystal film by open-tube vapor phase epitaxy is report in this paper,The result showed that this method was convenient to prepare Jarge-area,uniform at high quality MCT crystal films needed for the fabrication of IRFPA devices.
出处
《红外技术》
CSCD
1991年第6期15-17,共3页
Infrared Technology
关键词
汽相外延
外延生长
碲镉汞晶膜
MCT crystal film
Open-tube vapor phase cpitaxy
