摘要
利用溶胶 -凝胶 (sol- gel)方法制备了 Si O2 - Ge O2 薄膜 ,并测量了薄膜样品电场极化后光学二次谐波信号的相对大小和时间弛豫特性。通过对不同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较 ,表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响 。
Sol gel method was used to prepare SiO 2 GeO 2 films. The relative intensity of second harmonic generation(SHG) signals of the thermally poled films and their relaxations were measured. By comparing the decay of second harmonic generation of the films with different substrates and under different temperatures,it is shown than the stability of charge near the interface between the film and substrate is influenced by the bulk electric resistance of the substrate,and this charge character consequently influences the SHG stability of the film.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2000年第7期1004-1008,共5页
Acta Optica Sinica
基金
国家自然科学基金!(批准号 :19774 0 18)
国家攀登计划资助的课题
