摘要
本文利用金属—半导体接触的基本理论,发展了一种炉前简易判别化合物半导体外延层导电类型和载流子浓度范围的方法,其准确率为:GaAs和GaInP达100％,GaInAsSb可达90％左右。
By applying the fundamental theory of metal-semiconductor contact, an easy method for judging on-the-spot the type of electric conduction and the concentration range of charge carrier in the compound semiconductor epitaxial layer is developed in this paper. The accuracy of this method reaches 100％ for GaAs and GaInP, and approximately 90％ for GaInAsSb.
关键词
化合物半导体
延层
导电类型
Compound semiconductor
Expitaxial layer
Type of electric conduction
Concentration of charge carrier
