摘要
采用Ｘ射线光电子能谱（ＸＰＳ）对ＩｎＧａＡｓＰ／ＩｎＰ异质结构ＭＯＣＶＤ外延晶片作了表面薄层元素、组分定性、定量和深度分布分析。利用ＸＰＳ组分定量数据与带隙和组分量数据与晶体常数的经验公式计算带隙、晶格常数和失配率，并与光压谱（ＰＶＳ）测定的带隙值和Ｘ射线双晶衍射（ＤＣＤ）测定的失配率作了比较，比较结果是满意的。实验和分析表明，在研究ＭＯＣＶＤ外延膜材料表面组分和表面点阵结构方面。
The X ray Photoelectron Spectroscopy (XPS) has been used for the element qualitation,quantitation,chemical state analysis and depth profile of InGaAsP/InP MOCVD film.If using the XPS quantitative data to calculate the band gap and the mismatching ratio by different empirical formula the calcullating results are satisfiable as compared with the experemental data determined by the Photo Voltage Spectroscopy (PVS) and the Double Crystal X ray Diffraction (DCD).Study all in the artical means that XPS is a powerful tool for the MOCVD epitaxy film materials.
出处
《光通信研究》
1996年第2期45-51,共7页
Study on Optical Communications
基金
湖北省自然科学基金
