摘要
在电子制造行业,随着产品性能的不断提高,对表面质量的要求越来越高.硅片作为集成电路芯片的基础材料,其表面粗糙度和表面平整度成为影响集成电路刻蚀线宽的重要因素之一.在计算机硬盘技术中,磁头、磁盘的表面粗糙度、波纹度和纳米划痕不仅影响磁头的飞行稳定性,而且影响表面的抗腐蚀性.抛光是表面平面化加工的重要手段.与机械抛光、化学抛光、流体抛光、磁研磨抛光、离子束轰击抛光、电化学抛光、浮法抛光等常见的抛光技术相比,化学机械抛光(Chemical Mechanical Polishing,简称CMP)是目前广泛采用的并且是几乎唯一的全局平面化技术.CMP是机械削磨和化学腐蚀的组合技术,其工艺是将待抛光工件在一定的下压力及抛光液的存在下相对于抛光垫作旋转运动,借助抛光液中磨粒的机械磨削及化学氧化剂的腐蚀作用来完成对工件表面的材料去除,并获得光洁表面.该文综述了CMP技术在集成电路、计算机硬盘基片等先进电子产品制造中的应用.
With the increasing of product performances in electronic industry,surface quality becomes more and more important.As the basic materials of integrated circuit(IC),the roughness and flatness of wafer surfaces is one of the most important factors that affect the etching linewidth.In computer driver technology,the roughness and waviness as well as nano-scratches of magnetic head and disk surfaces may not only affect flying stability of the magnetic head but also affect anti-corrosion of the surfaces.Polishing is the effective means toplanarization of the surfaces.Compared with some ordinary polishing methods,chemical mechanical polishing(CMP)is the only finish machining technique up to date for surface global planarization.CMP is a surface planarization method in which a wafer rotated against apolishing pad in the presence of slurry while a pplying pressure.The applications of CMP on the manufacturing of IC,disk substrate and other advanced electronic products are reviewed in the paper.
作者
雷红
张鹏珍
LEI Hong;ZHANG Peng-zhen(Research Center of Nano-science and Nano-technology,Shanghai University,Shanghai 200436,P.R.China)
基金
上海市科委纳米专项资助项目(0352nm058)
