摘要
对溴化钾原料进行纯化、成型与热处理,制备出?200 mm×20 mm的多晶料。采用电阻加热Czochralski法,在合理的温场下生长出了?140 mm×100 mm的溴化钾单晶。为了有效解决了放肩过程中晶体表面裂纹等问题,采用了一控(水温)、双变(拉速、转速)微提拉放肩新工艺生长晶体。X射线衍射分析表明,生长的晶体为立方晶系的KBr,空间群Fm3m,晶格常数为a=0.6599 nm。分析了晶体中相互作用力及能量关系,认为溴化钾晶体质点间的相互作用不仅存在离子键的相互作用,同时还存在三体力及Van der Waals力的作用。根据半经验公式计算出熔融状态下的溴化钾的配位数为4。另外,晶体的透光性能测试表明,厚度5 mm的样品的透射率为90%。
Potassium bromide(KBr) polycrystalline material with the size of ? 200 mm×20mm was obtained after the KBr raw material was purified, formed and annealed. The KBr single crystal with the size of ? 140 mm×100 mm was grown by a resistance heating Czochralski(Cz) method. In order to efficiently eliminate the surface cracks in shoulder-expanding process, the crystal was grown by using a 'one controlled(water temperature) and double variety(pulling rate and rotation rate)' micro-pulling and shoulder-expanding technique. According to the analysis by X-ray diffraction, KBr crystal grown belongs to a cubic crystal system with the space group Fm3 m and the lattice parameter(a) of 0.6599 nm. Also, the interaction between the crystals is due to an ionic bond interaction, three body forces and Van der Waals force. The coordination number of KBr in melt is 4 according to the semi-empirical formula. The transmittance of the sample with the thickness of 5 mm is 90%.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2015年第1期60-64,共5页
Journal of The Chinese Ceramic Society
基金
吉林省科技发展计划(20110803)资助项目
关键词
溴化钾单晶
多晶料
熔体与固体结构
配位数
微提拉晶体生长
potassium bromide single crystal
polycrystalline material
melt and solid structure
coordination number
micro pulling crystal growth
