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一种2V、9μA、15×10^(-6)/℃高电源抑制CMOS带隙电压基准源 被引量：1

2 V、 9 μA、 15×10^(-6)/°C High PSR CMOS Bandgap Voltage Reference
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摘要 通过分析带隙电压基准源的PSR,发现运放的PSR为1时,基准电压将具有很高的PSR。基于该思想,在带隙电压基准源中引入PSR提高电路,实现一种低功耗、低温度系数、高电源抑制能力的带隙电压基准源。该带隙电压基准源采用TSMC0.6μm、两层POLY、两层金属的CMOS工艺实现,芯片面积为0.0528mm2。测试结果表明:其最大工作电流为9μA;在2～5V工作电压下温度系数为15×10-6/℃;线调整率为50μV/V;100kHz的PSR为-70dB。仿真与测试结果验证了该方法的有效性。 The power supply rejection（PSR） of bandgap voltage reference was analyzed in this paper. If the PSR of op amp was 1, a high PSR bandgap voltage reference was realized, an improved, circuit with a low power, low temperature coefficient, high PSR bandgap Voltage reference was presenteel. The PSR was Implemented in TSMC 0. 6 μm, double poly layers, double metal layers CMOS techudogical process, the die size is 0. 052 8 mm^2. The maximum supply current is 9 μA. The temperature coefficient is 15× 10^-6/℃ at 2-5 V supply voltage. The line regulation is 50μ V/V. The power supply rejection at 100 kHz was --70 clB. The results of the simulation and silicon measurement confirmed this method validity.
作者 李文冠 姚若河 郭丽芳
机构地区 华南理工大学微电子研究所
出处 《电子器件》 CAS 2008年第5期1490-1494,共5页 Chinese Journal of Electron Devices
关键词 带隙电压基准源 低功耗 高电源抑制 CMOS Bandgap voltage reference Low power High PSR CMOS
分类号 TN402 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献8

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二级参考文献8

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共引文献3

同被引文献13

  • 1冯朝坤.无线通信模数转换器中基准源设计【D].电子科技大学,2010.
  • 2DILIMOT G, BREZEANU G, MITU F, et al. Program- mable low voltage bandgap reference CMOS compati- ble[C].Proceedings of the International Conference on Semiconductor, 2002, 2:73 - 376.
  • 3YANG SH M, YIN Y SH, DENG H H. Design of an outer-chip controllable and inner-chip adjustable voltage ref- erence[C]. Proceedings of the International Conference on Anti-counterfeiting, Security, Identification, 2010: 134-137.
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  • 5HU J, YIN Y SH, DENG H H. Design of a high-performance brokaw band-gap reference[C]. Proceed- ings of the International Conference on Anti-counterfeiting, Security, Identification, 2010: 126-129.
  • 6WILLY M C. Analog design essentials[M].Springer, 2006, 104-105.
  • 7李娟,常昌远,李弦.一个低压高阶曲率补偿的CMOS带隙基准电压源的设计[J].现代电子技术,2007,30(22):169-171. 被引量：2
  • 8梁上泉,尹勇生,高明伦.14位200MSPS三段式电流舵D／A转换器的设计[J].电子测量与仪器学报,2008,22(3):78-82. 被引量：3
  • 9许小丽,冯全源.一种高温度性能的CMOS带隙基准源[J].微电子学与计算机,2010,27(1):25-28. 被引量：5
  • 10张万东,陈宏,王一鹏,于奇,宁宁,王向展.高电源抑制比和高阶曲率补偿带隙电压基准源[J].微电子学,2011,41(1):57-60. 被引量：14

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电子器件
2008年 第5期

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