In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional techn...In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional technology computer-aided design （3D- TCAD） numerical simulation. The results indicate that the main SET generation mechanism is not carder drift/diffusion but floating body effect （FBE） whether for positive or negative channel metal oxide semiconductor （PMOS or NMOS）. Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking （IS） layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.展开更多
Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proto...Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proton recoil detector was simulated, which consists of hydrogenous converter, i.e., high-density polyethylene(HDPE) for generating recoil protons by means of neutron elastic scattering(n, p) reaction and semiconductor material SiC, for generating a detectable electrical signal upon transport of recoil protons through it. SiC is considered in order to overcome the various factors associated with conventional Si-based devices such as operability in a harsh radiation environment, as often encountered in nuclear facilities. Converter layer thickness is optimized by considering 10~9 neutron events of different monoenergetic neutron sources as well as ^(241)Am-Be neutron spectrum. It is found that the optimized thickness for neutron energy range of 1–10 MeV is ~400 μm. However, the efficiency of fast neutron detection is estimated to be only 0.112%,which is considered very low for meaningful and reliable detection of neutrons. To overcome this problem, a stacked juxtaposition of converter layer between SiC layers has been analyzed in order to achieve high efficiency. It is noted that a tenfold efficiency improvement has been obtained—1.04% for 10 layers stacked configuration vis-à-vis 0.112% of single converter layer detector. Further simulation of the stacked detector with respect to variable converter thickness has been performed to achieve the efficiency as high as ~3.85% with up to 50 stacks.展开更多
Silicones can be cross-linked to materials with a wide variety of properties.In this work,the ringed oligomers of [SiO(OH)_2]nas well as the stacked structures of trimer and the linear strands of the dimer and trimer ...Silicones can be cross-linked to materials with a wide variety of properties.In this work,the ringed oligomers of [SiO(OH)_2]nas well as the stacked structures of trimer and the linear strands of the dimer and trimer were investigated systematically at B3 LYP/6-311 + + G(d,p) level combined with the conductor-like screening model(CPCM).This theoretical model reveals that,(1) SiO(OH)_2 will condense to stable ringed structures with SiO tetrahedrons;(2) in the ringed octamer [SiO(OH)_2]8,the macrocycle begins to pucker drastically;(3) from the linear strands of SiO rings it can be seen that the longer the chain is,the greater the energies decrease;(4) in [SiO(OH)_2]n(n ≥5) and in the strands of ringed oligomers,the highest occupied molecular orbitals(HOMOs) are primarily the n orbitals of the lone-pair electrons of oxygen atoms,so there are no delocalized π bonds.展开更多
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-...Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.展开更多
基于TSV(Through Silicon Via)技术,设计了一款采用硅基堆叠的变频微模组,通过PoP(Package on Package)堆叠实现多层硅基板堆叠封装,芯片两层堆叠垂直互连,完成X波段下变频功能。相比于多层硅基晶圆级直接堆叠架构,工艺难度降低,良率提...基于TSV(Through Silicon Via)技术,设计了一款采用硅基堆叠的变频微模组,通过PoP(Package on Package)堆叠实现多层硅基板堆叠封装,芯片两层堆叠垂直互连,完成X波段下变频功能。相比于多层硅基晶圆级直接堆叠架构,工艺难度降低,良率提升。该微模组利用类同轴硅通孔结构解决微波信号在多层硅基板中垂直传输的问题,并进行了实物测试验证。该变频微模组集成度高、射频性能良好,其体积相对于传统混合集成结构减少90%,实现了射频功能的微系统化。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376109,61434007,and 61176030)the Advanced Research Project of National University of Defense Technology,China(Grant No.0100066314001)
文摘In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional technology computer-aided design （3D- TCAD） numerical simulation. The results indicate that the main SET generation mechanism is not carder drift/diffusion but floating body effect （FBE） whether for positive or negative channel metal oxide semiconductor （PMOS or NMOS）. Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking （IS） layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.
基金supported by the grant of a research fellowship from Indira Gandhi Centre for Atomic Research,Department of Atomic Energy,India
文摘Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proton recoil detector was simulated, which consists of hydrogenous converter, i.e., high-density polyethylene(HDPE) for generating recoil protons by means of neutron elastic scattering(n, p) reaction and semiconductor material SiC, for generating a detectable electrical signal upon transport of recoil protons through it. SiC is considered in order to overcome the various factors associated with conventional Si-based devices such as operability in a harsh radiation environment, as often encountered in nuclear facilities. Converter layer thickness is optimized by considering 10~9 neutron events of different monoenergetic neutron sources as well as ^(241)Am-Be neutron spectrum. It is found that the optimized thickness for neutron energy range of 1–10 MeV is ~400 μm. However, the efficiency of fast neutron detection is estimated to be only 0.112%,which is considered very low for meaningful and reliable detection of neutrons. To overcome this problem, a stacked juxtaposition of converter layer between SiC layers has been analyzed in order to achieve high efficiency. It is noted that a tenfold efficiency improvement has been obtained—1.04% for 10 layers stacked configuration vis-à-vis 0.112% of single converter layer detector. Further simulation of the stacked detector with respect to variable converter thickness has been performed to achieve the efficiency as high as ~3.85% with up to 50 stacks.
基金National Natural Science Foundations of China(Nos.21502136 and 21571137)Natural Science Foundation of Shandong Province,China(No.ZR2012BL10)the University Science and Technology Project of Shandong Province,China(No.J13LD05)
文摘Silicones can be cross-linked to materials with a wide variety of properties.In this work,the ringed oligomers of [SiO(OH)_2]nas well as the stacked structures of trimer and the linear strands of the dimer and trimer were investigated systematically at B3 LYP/6-311 + + G(d,p) level combined with the conductor-like screening model(CPCM).This theoretical model reveals that,(1) SiO(OH)_2 will condense to stable ringed structures with SiO tetrahedrons;(2) in the ringed octamer [SiO(OH)_2]8,the macrocycle begins to pucker drastically;(3) from the linear strands of SiO rings it can be seen that the longer the chain is,the greater the energies decrease;(4) in [SiO(OH)_2]n(n ≥5) and in the strands of ringed oligomers,the highest occupied molecular orbitals(HOMOs) are primarily the n orbitals of the lone-pair electrons of oxygen atoms,so there are no delocalized π bonds.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)the Natural Science Foundation of Beijing Municipality of China(Grant No.4192064)+1 种基金the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the JKW Project of China(Grant No.31512060106)。
文摘Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.
文摘基于TSV(Through Silicon Via)技术,设计了一款采用硅基堆叠的变频微模组,通过PoP(Package on Package)堆叠实现多层硅基板堆叠封装,芯片两层堆叠垂直互连,完成X波段下变频功能。相比于多层硅基晶圆级直接堆叠架构,工艺难度降低,良率提升。该微模组利用类同轴硅通孔结构解决微波信号在多层硅基板中垂直传输的问题,并进行了实物测试验证。该变频微模组集成度高、射频性能良好,其体积相对于传统混合集成结构减少90%,实现了射频功能的微系统化。
