摘要
内部均压是高压硅堆研制的关键技术,而硅堆电压分布不均的现象在端部最为突出。以硅堆分布参数等效电路为基础,先采用解析方法分析硅堆内部电压分布规律和影响因素,针对硅堆端部电压分布尤其不均匀的特点,建立EMTP仿真模型,分析端部强制均压元件参数对硅堆电压分布不均匀系数的影响。提出采用非等值均压参数配置方法改善端部电压分布,并通过实验验证了这种非等值均压参数配置方法对改善高压硅堆电压分布不均匀度的效果。研究表明,这种端部均压方法能有效降低硅堆端部的分压,从而提高硅堆整体的反向耐压。
Voltage sharing is the key problem in development of high-voltage silicon stacks. The phenomenon of unequal voltage sharing is especially obvious at the ends of high-voltage silicon stacks. This paper analyzes the voltage sharing characteristics and the impact factors of high-voltage silicon stacks. A distributed parameter model of high-voltage silicon stack is set up, and the voltage sharing is investigated by EMTP simulation. The influences of voltage sharing component parameters on the end segments of the silicon stacks are analyzed. A method of unequal parameter voltage sharing is proposed. Numerical simulation and experiment are conducted to validate the effectiveness of the proposed method, and the results indicate that the proposed unequal parameter voltage sharing method can effectively reduce the voltage share at the end segments of a silicon stack, and therefore improve the reverse voltage-withstanding of whole silicon stack.
出处
《高压电器》
CAS
CSCD
北大核心
2009年第6期24-27,共4页
High Voltage Apparatus
关键词
高压直流
整流
高压硅堆
强制均压
硅整流管
HVDC
rectifier
HV silicon stack
forced voltage sharing
silicon diode
