报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜...报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx展开更多
Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements a...Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .展开更多
文摘报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx
文摘Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .
