摘要
SIPOS薄膜的含氧量是一个非常重要的工艺参数 .文中研究了用LPCVD法制备SIPOS薄膜的各种特性参数与含氧量的变化关系 ,提出了SIPOS薄膜生长的最佳工艺条件 .为SIPOS薄膜钝化技术的实用化奠定了基础 .
The oxygen content of the SIPOS thin film is a very improtant process parameter. The relation between the characteristic parameters and the oxygen content of the SIPOS thin film prepared by LPCVD is investigated in this paper, and the best process conditions of the SIPOS thin film are obtained. This paper lays the foundation for the practical application of the SIPOS film passivation technology.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2000年第3期309-311,共3页
Journal of Xidian University
基金
"八五"国家科技攻关资助项目!(8570 30 1 0 6)