Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using ...Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.展开更多
基金Project supported by the National Key Research and Development Project of China(Grant No.2016YFB0400100)the Hi-tech Research Project of China(Grant Nos.2014AA032605 and 2015AA033305)+5 种基金the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and61334009)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,and BE2015111)the Project of Green Young and Golden Phenix of Yangzhou City,the Postdoctoral Sustentation Fund of Jiangsu Province,China(Grant No.1501143B)the Project of Shandong Provinceial Higher Educational Science and Technology Program,China(Grant No.J13LN08)the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center,Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)Research Funds from NJU–Yangzhou Institute of Opto-electronics
文摘Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.
