The microelectronics industry is increasingly seeking freestanding multiferroic materials for the next generation of devices.Bismuth ferrite(BiFeO_(3)),known for its remarkable ferroelectric and antiferromagnetic prop...The microelectronics industry is increasingly seeking freestanding multiferroic materials for the next generation of devices.Bismuth ferrite(BiFeO_(3)),known for its remarkable ferroelectric and antiferromagnetic properties at room temperature,holds great promise for multifunctional applications.However,current fabrication methods depend on Sr_(3)Al_(2)O_(6)sacrificial layers that deteriorate under ambient conditions,which limits their practical use.In this study,we showcase the exceptional qualities of strontium cobalt oxide(SrCoO_(2.5))as an innovative sacrificial layer for BiFeO_(3).We successfully fabricated highquality films of both BiFeO_(3)and SrCoO_(2.5)using pulsed laser deposition(PLD),and we achieved freestanding BiFeO_(3)films through a careful chemical etching process that ensures precise quality control.Our investigation into the solubility and stability of SrCoO_(2.5)reveals its advantages over Sr_(3)Al_(2)O_(6),demonstrating enhanced durability while allowing long-term preservation of SrCoO_(2.5).The resulting freestanding films exhibit excellent crystallinity and surface smoothness,paving the way for their integration into next-generation electronic devices.This research not only advances the preparation of high-quality freestanding BiFeO_(3)but also highlights the potential of using SrCoO_(2.5)as a sacrificial layer in various perovskite oxide thin films,which are suitable for sensors,actuators,and memory devices.展开更多
基金financially supported by the Key Research and Development Program from the Ministry of Science and Technology(No.2023YFA1406301)the National Natural Science Foundation of China(Nos.12274061 and 12204090)+4 种基金Sichuan Science and Technology Program(No.2024ZYD0164)the Technology Department of Sichuan Province(No.2023NSFSC1336)the Young Scientists Fund of the National Natural Science Foundation of China(No.52403297)the National Natural Science Foundation of Jiangsu Province(No.BK20241426)the Young Elite Scientists Sponsorship Program of Jiangsu Association for Science and Technology(No.JSTJ-2024-010)
文摘The microelectronics industry is increasingly seeking freestanding multiferroic materials for the next generation of devices.Bismuth ferrite(BiFeO_(3)),known for its remarkable ferroelectric and antiferromagnetic properties at room temperature,holds great promise for multifunctional applications.However,current fabrication methods depend on Sr_(3)Al_(2)O_(6)sacrificial layers that deteriorate under ambient conditions,which limits their practical use.In this study,we showcase the exceptional qualities of strontium cobalt oxide(SrCoO_(2.5))as an innovative sacrificial layer for BiFeO_(3).We successfully fabricated highquality films of both BiFeO_(3)and SrCoO_(2.5)using pulsed laser deposition(PLD),and we achieved freestanding BiFeO_(3)films through a careful chemical etching process that ensures precise quality control.Our investigation into the solubility and stability of SrCoO_(2.5)reveals its advantages over Sr_(3)Al_(2)O_(6),demonstrating enhanced durability while allowing long-term preservation of SrCoO_(2.5).The resulting freestanding films exhibit excellent crystallinity and surface smoothness,paving the way for their integration into next-generation electronic devices.This research not only advances the preparation of high-quality freestanding BiFeO_(3)but also highlights the potential of using SrCoO_(2.5)as a sacrificial layer in various perovskite oxide thin films,which are suitable for sensors,actuators,and memory devices.
