In this paper, we introduce and investigate some types of deductive systems in hyper EQ-algebras and discuss relationships among them. Especially, we focus on investigating two types of important deductive systems, na...In this paper, we introduce and investigate some types of deductive systems in hyper EQ-algebras and discuss relationships among them. Especially, we focus on investigating two types of important deductive systems, namely, （positive） implicative strong deductive systems, respectively. Moreover we give equivalent characterizations of them.展开更多
In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a functio...In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.展开更多
Dense sintered bodies of proton conducting BaZrO3 (BZ) and Y-doped BaZrO3 (BZ-Y) were obtained at 1600℃ for a short sintering time of 5 hours, by the addition of NiO as a sintering promotion agent. The relative densi...Dense sintered bodies of proton conducting BaZrO3 (BZ) and Y-doped BaZrO3 (BZ-Y) were obtained at 1600℃ for a short sintering time of 5 hours, by the addition of NiO as a sintering promotion agent. The relative density and grain growth of samples, Ni-doped BaZrO3 (BZ-N) and Ni, Y co-doped BaZrO3 (BZ-NY), were increased with increasing Ni addition. The sinterability of BZ-NY was greatly improved just to add only 0.6 mol% Ni and the relative density of this sample was more than 98%, in contrast to that of 60% at most for BZ-Y without Ni addition. Electrical conductivity of BZ-NY added Ni 1.0 mol%, BaZr0.91Ni0.01Y0.08O3-α, was more than 10-3 S.cm-2 at 900℃?in a wet 1% hydrogen atmosphere, which value was 10 times higher than that of BZ-Y. In addition, the kind of electrical conduction carrier and an ionic transport number were also examined by employing various concentration cells. It was found that the proton conduction was dominant for both BZ-N and BZ-NY samples, although BZ-NY showed scarcely oxygenion conduction approximately 10% in a high temperature range higher than 800℃. From these results, as mall amount of Ni addition found to be effective for improvement of both the sinterability and the electrical conductivity.展开更多
基金Supported by the National Natural Science Foundation of China(Grant No.11571281)Independent Innovation Project of Graduate Students in Northwestern University(Grant No.YZZ15069)Scientific Research Project of Xi'an Peihua University(Grant No.PHKT16075)
文摘In this paper, we introduce and investigate some types of deductive systems in hyper EQ-algebras and discuss relationships among them. Especially, we focus on investigating two types of important deductive systems, namely, （positive） implicative strong deductive systems, respectively. Moreover we give equivalent characterizations of them.
文摘In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.
文摘Dense sintered bodies of proton conducting BaZrO3 (BZ) and Y-doped BaZrO3 (BZ-Y) were obtained at 1600℃ for a short sintering time of 5 hours, by the addition of NiO as a sintering promotion agent. The relative density and grain growth of samples, Ni-doped BaZrO3 (BZ-N) and Ni, Y co-doped BaZrO3 (BZ-NY), were increased with increasing Ni addition. The sinterability of BZ-NY was greatly improved just to add only 0.6 mol% Ni and the relative density of this sample was more than 98%, in contrast to that of 60% at most for BZ-Y without Ni addition. Electrical conductivity of BZ-NY added Ni 1.0 mol%, BaZr0.91Ni0.01Y0.08O3-α, was more than 10-3 S.cm-2 at 900℃?in a wet 1% hydrogen atmosphere, which value was 10 times higher than that of BZ-Y. In addition, the kind of electrical conduction carrier and an ionic transport number were also examined by employing various concentration cells. It was found that the proton conduction was dominant for both BZ-N and BZ-NY samples, although BZ-NY showed scarcely oxygenion conduction approximately 10% in a high temperature range higher than 800℃. From these results, as mall amount of Ni addition found to be effective for improvement of both the sinterability and the electrical conductivity.
