摘要
针对半导体桥电爆过程中的能量沉积和相变等作用机制尚不清晰的问题,通过实验与数值模拟研究了双V型半导体桥电爆特性及等离子体形态变化特征.搭建了同步测试系统,监测了10~38 V充电电压下,半导体桥电爆过程的电流电压变化,并结合高速摄影观测了电爆等离子体的形成和演化过程,发现电爆时间与加载电压呈指数衰减规律,且等离子体形成时刻与电压曲线第二峰值高度吻合.构建了电-热-相变耦合的半导体桥电爆三维计算模型,引入动态电导率、固-等离子体相变算法及电势-焦耳热能量沉积模型,实现了从桥区相变、发生电爆及后续等离子体膨胀的全过程仿真,分析了电压对桥区内温度、密度分布和等离子体流场的影响规律,发现高电压下,桥区V形尖角处出现电流集中和焦耳热累积,导致边缘优先电爆,等离子体膨胀速度快,并观察到在等离子体周围空气中形成了前驱压缩波,低电压下,热量则集中于桥区中心,导致中心区域首先电爆,等离子体膨胀较缓,对空气的压缩作用明显减弱.研究结果能够为半导体桥火工品换能元的优化设计与仿真提供计算方法和基础数据.
Since the mechanism of energy deposition and phase change in the process of semiconductor bridge electrical explosion is still unclear,the characteristics of electrical explosion and plasma morphology of double Vshaped semiconductor bridge were studied through experiments and numerical simulation.A synchronous test system was set up to monitor the current and voltage changes during the electrical explosion of the semiconductor bridge under charging voltages from 10 to 38 V.Combined with high-speed photography,the morphological evolution of the electrical explosion plasma was observed.It is found that the electrical explosion time and the loading voltage exhibited an exponential decay law,and the plasma formation time was highly consistent with the second peak of the voltage curve.A three-dimensional calculation model of electrical explosion of semi-conductor bridge coupled with electrical-thermal-phase change was constructed.By introducing dynamic con-ductivity,solid-plasma phase change algorithm and potential-Joule thermal energy deposition model,the whole process of phase change,electrical explosion and subsequent plasma expansion in the bridge area was simulated,and the influence of voltage on temperature,density distribution and plasma flow field in the bridge area was analyzed.It is found that current concentration and Joule heat accumulation occurred at the V-shaped sharp corner of the bridge area under high voltage.It led to the edge-first electric explosion and the rapid expansion of the plasma.It was observed that the precursor compression wave was formed in the air around the plasma.At low voltage,the heat was concentrated in the center of the bridge area,which led to the first electric explosion in the central area,the plasma expanded slowly,and the compression effect on the air was obviously weakened.The research results can provide calculation methods and basic data for the optimal design and simulation of semi-conductor bridge initiating explosive device transducer.
作者
陈朗
张书培
寇永锋
徐智贤
鲁建英
杨坤
刘昌华
伍俊英
刘丹阳
CHEN Lang;ZHANG Shupei;KOU Yongfeng;XU Zhixian;LU Jianying;YANG Kun;LIU Changhua;WU Junying;LIU Danyang(State Key Laboratory of Explosion Science and Safety Protection,Beijing Institute of Technology,Beijing 100081,China;China Safety Technology Research Academy of Ordnance Industry,Beijing 100053,China;Sichuan Huachuan Industry Co.,Ltd.,Chengdu,Sichuan 610106,China)
出处
《北京理工大学学报》
北大核心
2025年第12期1213-1222,共10页
Transactions of Beijing Institute of Technology
基金
国家自然科学基金青年科学基金项目(12302432)。
关键词
半导体桥
等离子体
高速摄影
流体力学计算
动态电导率模型
semiconductor bridge
plasma
high speed photography
fluid mechanics calculation
dynamic con-ductivity model
