This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) su...This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (V<sub>T</sub>), subthreshold slope (S), mobility (μ), onset voltage (V<sub>on</sub>) and I<sub>on</sub>/I<sub>off</sub> ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, I<sub>off</sub> current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.展开更多
Imaging detector arrays have been widely used in terahertz(THz)astronomical observations,where optical filters play an important role.In this work,a 5-THz metal-mesh bandpass filter(MMBF)using cross-slot-shaped resona...Imaging detector arrays have been widely used in terahertz(THz)astronomical observations,where optical filters play an important role.In this work,a 5-THz metal-mesh bandpass filter(MMBF)using cross-slot-shaped resonators is developed and fabricated on Mylar film through photolithography.Extensive simulations,accounting for factors such as Mylar film loss,surface conductivity,corner errors,and surface roughness,were conducted to assess their impact on the filter’s performance.The measured characteristics,including a center frequency of 5.06 THz,a transmittance of 62%,and a 3-dB fractional bandwidth(FBW)is 38%,obtained via Fourier-transform infrared spectroscopy(FTIR),closely match the simulation results.This scalable metal-mesh filter shows promise for future THz astronomical applications.展开更多
文摘This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (V<sub>T</sub>), subthreshold slope (S), mobility (μ), onset voltage (V<sub>on</sub>) and I<sub>on</sub>/I<sub>off</sub> ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, I<sub>off</sub> current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.
基金supported in part by the National Key Research and Development Program of China(Grant No.2023YFA1608200)the National Natural Science Foundation of China(Grant No.12020101002)+1 种基金the Fund from the Chinese Academy of Sciences(Grant No.PTYQ2024BJ0010)supported by the Shanghai Institute of Microsystem and Information Technology。
文摘Imaging detector arrays have been widely used in terahertz(THz)astronomical observations,where optical filters play an important role.In this work,a 5-THz metal-mesh bandpass filter(MMBF)using cross-slot-shaped resonators is developed and fabricated on Mylar film through photolithography.Extensive simulations,accounting for factors such as Mylar film loss,surface conductivity,corner errors,and surface roughness,were conducted to assess their impact on the filter’s performance.The measured characteristics,including a center frequency of 5.06 THz,a transmittance of 62%,and a 3-dB fractional bandwidth(FBW)is 38%,obtained via Fourier-transform infrared spectroscopy(FTIR),closely match the simulation results.This scalable metal-mesh filter shows promise for future THz astronomical applications.
