InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.展开更多
用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激...用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F-展开更多
基金Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of ChinaProject(61201028,60876009)supported by the National Natural Science Foundation of China
文摘InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
文摘用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F-
