摘要
报道了利用LP-MOCVD技术,通过Ⅴ/Ⅲ比,总载气流量和生长温度等生长条件的研究,在InP衬底上长出了制作器件所要求的InGaAs材料,用转靶X射线衍射仪和光致发光手段对生长的材料进行了测试分析。
This paper reports on the experimental results of high quality In- GaAs materials grown by LP-MOCVD on InP substrates. The growth conditions, such as Ⅴ/Ⅲ ratio, total carrying gas flow, and growth temperature, etc. are stud- ied in detail. The materials are measured by means of rotating anode X-ray diffrac- tometer and photoluminescence.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期367-370,共4页
Semiconductor Optoelectronics
