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失配异质结构InGaAs/InP的MOCVD生长

MOCVD Epitaxial Growth of Mismatched Heterostructure InGaAs/InP
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摘要 基于延展波长(截止波长2.2μm)InGaAs-PIN光电探测器进行了失配异质结构InxGa1-xAs(x=0.72)/InP的MOCVD外延生长研究。采用宽带隙组分梯度渐变的InAlAs作为缓冲层和顶层,通过生长优化,获得了满足器件要求的外延材料。 Studied is the MOCVD epitaxial growth of the lattice-mismatched heterostructure InGaAs films on InP substrate with In fraction reaching 72%.Using step grading InAlAs as buffer layers and cap layer,the epitaxial materials which meet the practial requirements were attained by optimizing the growth conditions.
作者 周勇 赵志强 周勋 刘万清 莫才平
机构地区 重庆光电技术研究所 重庆邮电大学生物医学工程研究中心
出处 《半导体光电》 CAS CSCD 北大核心 2012年第6期817-821,共5页 Semiconductor Optoelectronics
关键词 INGAAS 失配异质结构 MOCVD 梯度渐变InAlAs缓冲层 InGaAs lattice-mismatched MOCVD step-grading InAlAs buffers
分类号 TN304.054 [电子电信—物理电子学]
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参考文献12

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半导体光电
2012年 第6期

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