Force sensing provides a crucial physical-electrical channel within sensing technology.This study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical m...Force sensing provides a crucial physical-electrical channel within sensing technology.This study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical module and an optical channel formed by two ideal InGaN/GaN light-emitting diodes(LEDs)with transmit-receive characteristics.As an emitter,the InGaN/GaN device(5 mm×4 mm)exhibits electroluminescence at 469 nm with an on-voltage of 2.33 V.As a receiver,the response spectrum of InGaN/GaN devices spans from 350 to 480 nm,featuring a peak at 390 nm,rise time of~68.4 ms,and falling edge of~61.0 ms.The PDMS film can transform the force into deformation data and influence the signals in the optical receiver.The drive current,the gap between the emitter and receiver,and distance between the LED and PDMS mechanical module all significantly influence the receiver photocurrent.Distinct from the integrated design,our PDMS-assisted force sensing model uses discrete structures to allow signal intensity optimization.The finite element simulation and experimental results indicate that force of the designed PDMS film exhibits a linear relationship with z-axis displacement and photocurrent from 0 to 0.7 mm.The findings reveal that when the PDMS film height is 1.5 mm and the distance between the emitter and receiver is near,the photocurrent is higher.Meanwhile,Ag film with a thickness of 100 nm considerably enhances the photocurrent response and signal stability in the sensing channel.Finally,a weight measurement demonstration is employed to demonstrate force sensing.The system resolution is 1.23μA/N,and the measurement range is 0 to 0.7 N.展开更多
High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and...High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.展开更多
报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放...报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。展开更多
基金supported by the Natural Science Foundation of Jiangsu Province(BK20210593)the National Natural Science Foundation of China(62204127,62404040)the Fundamental Research Funds for the Central Universities(No.NS2022096).
文摘Force sensing provides a crucial physical-electrical channel within sensing technology.This study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical module and an optical channel formed by two ideal InGaN/GaN light-emitting diodes(LEDs)with transmit-receive characteristics.As an emitter,the InGaN/GaN device(5 mm×4 mm)exhibits electroluminescence at 469 nm with an on-voltage of 2.33 V.As a receiver,the response spectrum of InGaN/GaN devices spans from 350 to 480 nm,featuring a peak at 390 nm,rise time of~68.4 ms,and falling edge of~61.0 ms.The PDMS film can transform the force into deformation data and influence the signals in the optical receiver.The drive current,the gap between the emitter and receiver,and distance between the LED and PDMS mechanical module all significantly influence the receiver photocurrent.Distinct from the integrated design,our PDMS-assisted force sensing model uses discrete structures to allow signal intensity optimization.The finite element simulation and experimental results indicate that force of the designed PDMS film exhibits a linear relationship with z-axis displacement and photocurrent from 0 to 0.7 mm.The findings reveal that when the PDMS film height is 1.5 mm and the distance between the emitter and receiver is near,the photocurrent is higher.Meanwhile,Ag film with a thickness of 100 nm considerably enhances the photocurrent response and signal stability in the sensing channel.Finally,a weight measurement demonstration is employed to demonstrate force sensing.The system resolution is 1.23μA/N,and the measurement range is 0 to 0.7 N.
文摘High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.
文摘报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。
基金National Natural Science Foundation of China(No.62204127)the Natural Science Foundation of Jiangsu Province(No.BK20215093)State Key Laboratory of Luminescence and Applications(No.SKLA‒2021‒04)。
