摘要
采用蒙特卡罗光线追踪方法,模拟GaN基倒装LED芯片的光提取效率,比较了蓝宝石衬底剥离前后、蓝宝石单面粗化和双面粗化、有无缓冲层下LED光提取效率的变化,并对粗化微元结构和尺寸作了进一步选取与优化。研究结果表明:采用较厚的蓝宝石衬底和引入AlN缓冲层均有利于LED光提取效率的提高;蓝宝石衬底双面粗化对提高光提取效率的效果要明显好于单面粗化;表面粗化的结构和尺寸对光提取效率有较大影响,当微元特征尺寸与微元间距相当时,光提取效率较高。
According to Monte-Carlo ray tracing method,this paper simulated the GaN-based flip-chip LED light extraction efficiency（LEE）,compared the differences between the status of sapphire with substrate and without it,with one side roughening and double sides roughening,with and without buffer layer,and made further selection and optimization about the structure and the size of surface roughing unit.The results showed that both the thicker substrate and introduction of AlN buffer layer were favorable for the increase of LEE,the LEE for the chip with double surfaces roughened sapphire substrate was significantly better than the one with single surface roughened sapphire substrate,the structure and size of the surface roughing unit have great influences on the LEE,the LEE was relatively higher when the size of micro roughened structure was comparable to its one-to-one distance.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2011年第8期773-778,共6页
Chinese Journal of Luminescence
基金
中央高校科研业务费(CDJZR10120014
CDJXS11120021)资助项目
关键词
GaN基倒装LED
光提取效率
光线追踪
双面粗化
ALN缓冲层
GaN-based
flip-chip
LEDs
light extraction efficiency
light ray trace
double-surface roughening
AlN buffer layer
