摘要
报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。
A single-chip T/R MMIC for Ku-band Applications based on GaN HEMT technology was presented. The developed single-chip T/R MMIC integrated both transmitter channel and receiver channel has been fabricated by a 0.15μm GaN HEMT technology. The chip area is 7.00 mm × 3.32 mm. The MMIC contains a 5-bit digital attenuator, a 5-bit digital phase shifter, a first low-noise amplifier, a second low-noise amplifier, a drive amplifier, a power amplifier, a small signal SPDT switch for common path and a power SPDT switch for transmitting/receiving switching. RF performance measured in assembling at frequency range of 16- 17 GHz shows a small signal gain over 21.0 dB with associated noise figure below 3.5dB for the receiver part and a power gain over 20.8dB with output power over 40.8dBm and a typical power added efficiency of 30% for the transmitter part of the MMIC. The performance of the integrated 5-bit digital phase shifter and 5-bit digital attenuator is very well to meet the design specification.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期1-5,31,共6页
Research & Progress of SSE
