Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0...Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.展开更多
CuInSe_(2) is an N-type diamond-like semiconductors thermoelectric candidate for power generation at medium temperature with its environmentally friendly and cost-effective properties.However,the intrinsic high therma...CuInSe_(2) is an N-type diamond-like semiconductors thermoelectric candidate for power generation at medium temperature with its environmentally friendly and cost-effective properties.However,the intrinsic high thermal conductivity of CuInSe_(2) limits the enhancement of its thermoelectric performance.Herein,we investigate the thermoelectric performance of N-type CuInSe_(2) materials by incorporating ZnSe through a solid solution strategy.A series of(CuInSe_(2))_(1-x)(ZnSe)_(x)(x=0.0,0.2,0.4,0.6,0.8,1.0)samples were synthesized,forming continuous solid solutions,while introducing minor porosity.ZnSe solid solution effectively reduces the lattice thermal conductivity of the CuInSe_(2) matrix at near-room temperatures,but has a weaker effect at higher temperatures.Due to the intrinsic low carrier concentration of the system,resulting in high resistivity,the maximum figure of merit(ZT)of(CuInSe_(2))0.8(ZnSe)0.2 reaches 0.08 at 773 K.Despite the relatively low ZT,the solid solution strategy proves effective in reducing the lattice thermal conductivity near-room temperature and offers potential for cost-effective thermoelectric materials.展开更多
基金Project(2004AA513023) supported by the National High Technology Research and Development Program of China
文摘Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.
基金supported by the Fundamental Research Funds for the Central Universities under Grant No.2024BRB010。
文摘CuInSe_(2) is an N-type diamond-like semiconductors thermoelectric candidate for power generation at medium temperature with its environmentally friendly and cost-effective properties.However,the intrinsic high thermal conductivity of CuInSe_(2) limits the enhancement of its thermoelectric performance.Herein,we investigate the thermoelectric performance of N-type CuInSe_(2) materials by incorporating ZnSe through a solid solution strategy.A series of(CuInSe_(2))_(1-x)(ZnSe)_(x)(x=0.0,0.2,0.4,0.6,0.8,1.0)samples were synthesized,forming continuous solid solutions,while introducing minor porosity.ZnSe solid solution effectively reduces the lattice thermal conductivity of the CuInSe_(2) matrix at near-room temperatures,but has a weaker effect at higher temperatures.Due to the intrinsic low carrier concentration of the system,resulting in high resistivity,the maximum figure of merit(ZT)of(CuInSe_(2))0.8(ZnSe)0.2 reaches 0.08 at 773 K.Despite the relatively low ZT,the solid solution strategy proves effective in reducing the lattice thermal conductivity near-room temperature and offers potential for cost-effective thermoelectric materials.
