摘要
本文报道了用高频溅射法制CuInSe_2、CuInS_2薄膜。对薄膜的表面形貌、结构、组份和导电类型等进行了观察和测量,对工艺和薄膜性能的关系作了讨论。
The CulnSe2 films have becn fabricated by sputter depoditing.The CulnS_2 films were made by two methods: 1 Cu, In were sputter depositing on substrates first. Then the substrates were vulcanized to form CulnS_2 film in a low temperature furnace.2 Cu, In, S were sputtered from one Cu, In, S mixed target. The composition, structure, electric properpties of the films have been discussed in rslation to preparation conditions.
出处
《云南师范大学学报（自然科学版）》
1992年第2期92-95,共4页
Journal of Yunnan Normal University:Natural Sciences Edition
基金
国家自然科学基金
云南省应用基础基金资助项目
关键词
薄膜
太阳能电池
铜锢硒
铜锢硫
sputter deposition CuInSe_2 film CuInS_2 film
