As a promising optical and piezoelectric crystal,efficient growth of LGN single crystal is crucial for its practical applications.Herein,a langanite(La_(3)Ga_(5.5)Nb_(0.5)O_(14),LGN)crystal with high quality was succe...As a promising optical and piezoelectric crystal,efficient growth of LGN single crystal is crucial for its practical applications.Herein,a langanite(La_(3)Ga_(5.5)Nb_(0.5)O_(14),LGN)crystal with high quality was successfully grown by the Bridgman method along the Z direction.In order to prepare high-purity polycrystalline precursors for LGN crystal growth,the sintering conditions of LGN polycrystalline precursors were studied in detail.The melting point of LGN was also measured to provide a reference for the crystal growth temperature.For the[001]oriented wafer,the full width at half maximum(EWHM)value of the nigh-resolution X-ray diffraction(HRXRD)analysis is 38.52",demonstrating that the LGN crystal exhibits excellent crystalline quality.In addition,we also measured the thermal properties and transmission spectrum of the as-grown LGN crystal.It is found that the absorption peak at 1.85μm of the LGN crystal grown in air using the Bridgman method disappears compared with previous reports(grown in N_(2+)(1-3)vol%O_(2)atmosphere),which is attributed to the oxygen-enriched growth environment.Similar phenomenon also occurs in other LGS-type disordered crystals.It is believed that these findings may expand the potential applications of LGS series crystals at 1.85μm.展开更多
基金Project supported by the National Key R&D Program of China(2022YFB3204000)National Natural Science Foundation of China(51832009)。
文摘As a promising optical and piezoelectric crystal,efficient growth of LGN single crystal is crucial for its practical applications.Herein,a langanite(La_(3)Ga_(5.5)Nb_(0.5)O_(14),LGN)crystal with high quality was successfully grown by the Bridgman method along the Z direction.In order to prepare high-purity polycrystalline precursors for LGN crystal growth,the sintering conditions of LGN polycrystalline precursors were studied in detail.The melting point of LGN was also measured to provide a reference for the crystal growth temperature.For the[001]oriented wafer,the full width at half maximum(EWHM)value of the nigh-resolution X-ray diffraction(HRXRD)analysis is 38.52",demonstrating that the LGN crystal exhibits excellent crystalline quality.In addition,we also measured the thermal properties and transmission spectrum of the as-grown LGN crystal.It is found that the absorption peak at 1.85μm of the LGN crystal grown in air using the Bridgman method disappears compared with previous reports(grown in N_(2+)(1-3)vol%O_(2)atmosphere),which is attributed to the oxygen-enriched growth environment.Similar phenomenon also occurs in other LGS-type disordered crystals.It is believed that these findings may expand the potential applications of LGS series crystals at 1.85μm.
