期刊文献+

四方品系晶体的Bridgman法生长的稳态数值模拟 被引量:2

Numerical Simulation of Bridgman Method for Tetragonal System
在线阅读 下载PDF
导出
摘要 本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,将产生“W”形固液界面。通过比较,指出不同导热系数组合时晶体生长的难易。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,界面平坦,容易长出较好质量的晶体。对中、低级晶系的生长,晶体横向导热系数应大于纵向导热系数。 Bridgman method for tetragonal system was investigated by numerical simulation. If the conductivity of melt lies in middle segment between the conductivity along transverse direction of crystal and the conductivity along longitudinal direction of crystal, there would be a ' W'-shaped solid-liquid interface, and the inferface would be much flatter. In this case, it is easy to grow high quality crystal. To the growth of low and middle class crystal, the conductivity along transverse direction of crystal should be bigger than that along longitudinal direction of crystal.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2003年第5期455-459,共5页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.59732040)
关键词 四方晶系晶体 BRIDGMAN法 晶体生长 稳态数值模拟 导热系数 tetragonal system Bridgman method conductivity
  • 相关文献

参考文献2

  • 1Wouters P, Van Schaftingen J J, Crochet M J. Numerical Simulation of the Horizontal Bridgman Growth. Part Ⅲ: Calculation of the Interface [J]. International Journal for Numerical Methods in Fluids,1987,7:131.
  • 2Chang C J. Brown R A. Finite Element Calculation of Buoyancy-Driven Convection near a Melt/Solid Phase Boundary. In: Numerical Properties and Methodologies in Heat Transfer [M]. Ed T-M Shift (Hemisphere, New York, 1982).

同被引文献25

  • 1韩杰才,左洪波,孟松鹤,张明福,姚泰,李长青,许承海,汪桂根.泡生法制备大尺寸蓝宝石单晶体[J].人工晶体学报,2005,34(1). 被引量:21
  • 2聂辉,陆炳哲.蓝宝石及其在军用光电设备上的应用[J].舰船电子工程,2005,25(2):131-133. 被引量:54
  • 3曹余惠.热辐射透过百分数对界面形状的影响[J].人工晶体学报,1996,25(4):286-290. 被引量:8
  • 4张克从 张乐漶.晶体生长科学与技术[M].北京:科学出版社,1997..
  • 5SCHMID F. Crystal Growing. U.S. Patent. 1975,3:898-907.
  • 6SCHMID F, KHATFACK C P, FELT D M. Producing large sapphire for optical pplicaions [ J ]. Am Ceram Soc Bull,1994,73 (2) :39 -44.
  • 7BRANDON S, GAZIT D, HOROWITZ A. Interface shape and thermal fields during the gradient solidification method growth of sapphire single crystals[ J]. Journal of Crystal Growth 1996,169 : 190 - 201.
  • 8BRANDON S, BAZIT D, HOROWITZ A. Modeling of crystal growth process in during the gradient solidification method growth of sapphire single crystals,Journal of Crystal Growth 1983,169 : 147 - 155.
  • 9Schmid F,Khattak C P,Felt D M.Producing large sapphire for optical applications[M] Am Ceramic Soc Bull,1994,73 (2):39-43.
  • 10Kogler K,Lane R.Infrared (IR) window and domes data base[C].Proceedings of 8th DoD Electromagnetic Windows Symposium,2000,434.

引证文献2

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部