摘要
在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证。与传统垂直Bridgman法的对比实验结果表明,该方法可以在提高轴向组分均匀性的前提下增大抽拉速度,进而提高晶体生长速度。
Based on the solid/liquid interface shift theory and the SODCM (the second-order opposite diffusion compensation method) model, the vertical Bridgman growth of Hg_(1-x)Mn_xTe with variational withdrawal rate was studied and its feasibility was validated through theoretical analysis and experimental results. Both theoretical analysis and experimental results show that the axial composition uniformity is improved at the optimized variational withdrawal rate and the crystal growth rate is also increased meanwhile.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第2期137-140,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金(50336040)
国家杰出青年基金(59825109)资助
