Buried channel array transistors enable fast and high-density integrated devices.The depth of the PN junction and carrier dynamics at the depletion layer in silicon wafers have a crucial influence on their performance...Buried channel array transistors enable fast and high-density integrated devices.The depth of the PN junction and carrier dynamics at the depletion layer in silicon wafers have a crucial influence on their performance and reliability.Therefore,rapid and non-contact/non-destructive inspection tools are necessary to accelerate the semiconductor industry.Despite the great efforts in this field,realizing a technique to probe the junction depth and carrier dynamics at the PN junction inside wafers remains challenging.Herein,we propose a new approach to access PN junctions embedded in wafers using terahertz(THz)emission spectroscopy.THz emission measurements and simulations demonstrate that the amplitude and polarity of THz emissions reflect the junction depth and carrier dynamics at the PN junctions.It allows us to evaluate the junction depth non-destructively with nanometer-scale accuracy,surpassing the limits of traditional techniques.Laser-induced THz emission spectroscopy is a promising method for the sensitive and non-contact/non-destructive evaluation of Si wafers and will benefit the modern semiconductor industry.展开更多
扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其...扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其相互关系表明,对于评价掺杂的总质量,只测量方块电阻是不全面的。而测量杂质浓度或杂质浓度分布,将是检查扩散层质量的较好方法。展开更多
基金M.T.acknowledges support by JSPS KAKENHI Grant No.JP23H00184F.M.acknowledges support in part by Grantin-Aid for JSPS Fellows Grant No.23KJ1475 and Program for Leading Graduate Schools:“Interactive Materials Science Cadet Program”.
文摘Buried channel array transistors enable fast and high-density integrated devices.The depth of the PN junction and carrier dynamics at the depletion layer in silicon wafers have a crucial influence on their performance and reliability.Therefore,rapid and non-contact/non-destructive inspection tools are necessary to accelerate the semiconductor industry.Despite the great efforts in this field,realizing a technique to probe the junction depth and carrier dynamics at the PN junction inside wafers remains challenging.Herein,we propose a new approach to access PN junctions embedded in wafers using terahertz(THz)emission spectroscopy.THz emission measurements and simulations demonstrate that the amplitude and polarity of THz emissions reflect the junction depth and carrier dynamics at the PN junctions.It allows us to evaluate the junction depth non-destructively with nanometer-scale accuracy,surpassing the limits of traditional techniques.Laser-induced THz emission spectroscopy is a promising method for the sensitive and non-contact/non-destructive evaluation of Si wafers and will benefit the modern semiconductor industry.
文摘扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其相互关系表明,对于评价掺杂的总质量,只测量方块电阻是不全面的。而测量杂质浓度或杂质浓度分布,将是检查扩散层质量的较好方法。
