摘要
介绍了在全国产设备构成的中试线上开展的高效单晶硅太阳电池研究工作,并制备出了最高转换效率 达15．7％的单体电池(面积103×103mm2)。实验采用PECVD方法制备SiNx减反、钝化薄膜,并采用正背面电极 一次金属化烧结技术,同时完成氮化硅薄膜烧穿工艺。实验还研究了PECVD硅烷与氨气流量比对SiNx钝化、光 学和保护性质的影响。分析了氮化硅薄膜及简化新工艺与提高太阳电池效率的关系。实验最后采用化学染色法 测量了太阳电池的p-n结结深,结果表明该太阳电池的p-n结为0．25μm的浅结,直接证明了SiNx薄膜对p-n结有 良好的保护作用。
The high efficiency monocrystalline silicon solar cells were fabricated by co-firing technique. SiNx thin fdm as ARC , excellent passivation coating and protecting coating by PECVD were deposited and fabricated achieving good performance of solar cells with a shallow p-n junction of depth less than 0.3μm. Chemical dyeing method in measuring the depth of p-n junction of the solar cells was employed and the results indicated that the fabricated silicon solar cells have a shallow p-n junction with less than 0.3μm. The properties of both shallow p-n junction and SiNx thin film and their relations with performances of solar cells were discussed as well.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2005年第4期585-588,共4页
Acta Energiae Solaris Sinica
基金
上海市长寿命大功率太阳电池研究项目(001611027-A)
关键词
晶体硅太阳电池
SiNx薄膜
烧穿
化学染色
结深
crystalline silicon solar cell
SiNx thin film
firing-through
chemical dyeing
junction depth
