摘要
扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其相互关系表明,对于评价掺杂的总质量,只测量方块电阻是不全面的。而测量杂质浓度或杂质浓度分布,将是检查扩散层质量的较好方法。
Diffusion technology is a traditional process in manufacturei'ng semi- conductor devices(including semiconductor optoelectronic devices and integrated cir- cuits).However,it is quite common that only the sheet resistance is to be measured after diffusion in St-diffusion technlology.We have analyzed and measured the following diffusion parameters:sheet resistance,junction depth,surface impuity concentration and the distribution of impurity concentration for St-diffused layer.The results show that for evaluating the total quality it is unperfect if we only measure the sheet resistance.It is also shown that to measure impurity concentration and/or the distribution of impurity concentration is a better way for checking the diffused layer quality.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第2期166-170,共5页
Semiconductor Optoelectronics
关键词
硅
扩散层
参数
测量
方块电阻
Diffusion Layer
Carrier Concentration
Sheet Resistanceand Junction Depth
