This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18...This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.展开更多
An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced long...An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced longitudinal pressure gradient.But accumulation of pollutants such as N_2 and O_2 will decrease the adsorption ability of the NEG,leading to a reduction of NEG lifetime.Therefore,an NEG thin film coated with a layer of Pd,which has high diffusion rate and absorption ability for H_2,can extend the service life of NEG and improve the pumping rate of H_2 as well.In this paper,with argon as discharge gas,a magnetron sputtering method is adopted to prepare TiZrV-Pd films in a long straight pipe.By SEM measurement,deposition rates of TiZrV-Pd films are analyzed under different deposition parameters,such as magnetic field strength,gas flow rate,discharge current,discharge voltage and working pressure.By comparing the experimental results with the simulation results based on Sigmund's theory,the Pd deposition rate C can be estimated by the sputtered depth.展开更多
La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by...La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.展开更多
Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are inve...Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.展开更多
Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties ...Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1.展开更多
A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide rang...A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.展开更多
Shunt resistance of solar cell must be monitored for large area solar cell manufactured with conventional process.A measuring method for the shunt resistance is derived from direct-current model.The shunt resistance o...Shunt resistance of solar cell must be monitored for large area solar cell manufactured with conventional process.A measuring method for the shunt resistance is derived from direct-current model.The shunt resistance of solar cell is obtained only by treating a part of I-V data.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60807001)the National Basic Research Program of China (Grant No. 2011CB201605)the Foundation of Henan Educational Committee (Grant No. 2010A140017)
文摘This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.
基金supported by the National Natural Science Funds of China(No.11205155)Fundamental Research Funds for the Central Universities(WK2310000041)
文摘An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced longitudinal pressure gradient.But accumulation of pollutants such as N_2 and O_2 will decrease the adsorption ability of the NEG,leading to a reduction of NEG lifetime.Therefore,an NEG thin film coated with a layer of Pd,which has high diffusion rate and absorption ability for H_2,can extend the service life of NEG and improve the pumping rate of H_2 as well.In this paper,with argon as discharge gas,a magnetron sputtering method is adopted to prepare TiZrV-Pd films in a long straight pipe.By SEM measurement,deposition rates of TiZrV-Pd films are analyzed under different deposition parameters,such as magnetic field strength,gas flow rate,discharge current,discharge voltage and working pressure.By comparing the experimental results with the simulation results based on Sigmund's theory,the Pd deposition rate C can be estimated by the sputtered depth.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174142 and 11304160he National Basic Research Program of China under Grant No 2012CB921504the Special Fund for Public Interest of China under Grant No201510068
文摘La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.
基金Supported by the National Natural Science Foundation of China under Grant No 11304160the Special Fund for Public Interest of China under Grant No 201510068,and the NUPTFC under Grant No NY215111
文摘Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.
基金Funded by the Major Project of National Natural Science Foundation of China (60490290)
文摘Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1.
文摘A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.
文摘Shunt resistance of solar cell must be monitored for large area solar cell manufactured with conventional process.A measuring method for the shunt resistance is derived from direct-current model.The shunt resistance of solar cell is obtained only by treating a part of I-V data.
