In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT）...In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.展开更多
We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the ...We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.展开更多
基金Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009)the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)
文摘In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002National Natural Science Foundation of China under Grant Nos 11435010 and 61474086
文摘We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.
基金National Natural Science Foundation of China(51402013,51272024)China Postdoctoral Science Foundation(2014M550022)Fundamental Research Funds for the Central Universities(FRF-TP-15-052A2)~~
基金Project supported by the National Natural Science Foundation of China(60890192,60877006,50872146)the Chinese Science and Technology Ministry(“863”,No.2009AA033101)~~
