摘要
报道了原子力显微镜对MOVPE生长GaN材料过渡层表面结构的观察，重点分析了氯化、退火前后过渡层结构变化的原因及其对外延生长晶体质量的影响，探讨了不同条件下GaN成核模式的变化，对GaN材料的生长初期成核机理有了进一步的了解，通过优化生长条件，最终获得了X射线双晶衍射半峰宽为5arcmin，表面明亮的高质量GaN外延层。
The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray rocking curve line width of 5' and bright surface is obtained.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期313-318,共6页
Research & Progress of SSE
