摘要
研究低温生长GaN过渡层（缓冲层）在AP－MOCVD生长GaN材料过程中的作用，探讨了过渡层的生长温度、时间、氮化时间等参数对GaN材料晶体质量的影响，通过对过渡层的特性参数的分析、优化，获得了X射线双晶衍射半峰宽为6’的GaN外延层．
This paper presents the comparative study of the characteristic of GaN epilayer by MOCVD using GaN buffer layer. In order to improve the quality of the grown materlal, some parameters inclu-ing buffer layer temperature, growth time, the pre-nitrided time of sapphire substrate are taken into account, the films grown on pre-nitrided sapphire substrate exhibit improved crystal quality, in our experiments, the X-ray rocking curve line widths of 6' were obtained for our pre-nitrided films.
出处
《吉林大学自然科学学报》
CAS
CSCD
1997年第2期59-62,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
国家重点实验室开放课题
863计划新材料领域基金
