The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailabi...The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.展开更多
Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ra...Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.展开更多
报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜...报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.U23A20358,62474170,61925110,62404214,and 62234007)the University of Science and Technology of China(USTC)Research Funds of the Double First-Class Initiative(Grant No.WK2100000055)+2 种基金the Project of the 46t hResearch Institute of CETC(Grant No.WDZC202446007)the JieBang Headed Project of Changsha City Hunan Province(Grant No.kq2301006)the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS。
文摘The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.
基金Research Project of Shenzhen Science and Technology Innovation Committee(JCYJ20180306170801080)。
文摘Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.
文摘报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx
