High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to ac...High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to achieve a smooth surface free of hexagonal hillocks on these templates. To address this issue, we investigate the mechanism of compressive stress accumulation during the growth of Al Ga N-based epilayers on HTA-Al N templates using in-situ curvature analysis in this study. To verify the mechanism, a low-Al-content Al Ga N interlayer is introduced between the Al N epilayer and the subsequent Al Ga N epilayer. The larger a-plane lattice constant of this interlayer relative to the Al Ga N epilayer slows the accumulation rate of compressive stress. The hexagonal hillock can be effectively suppressed and the surface of Al Ga N epilayer can be significantly regulated by adopting various low-Al-content Al Ga N interlayers. This work provides a comprehension on the stress accumulation mechanism in Al Ga N epilayers and a feasible method to obtain hillock-free surface of Al Ga N epilayers on HTA-Al N templates,which will be beneficial for fabricating Al Ga N based devices.展开更多
The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailabi...The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.展开更多
基金supported by the National Key R&D Program of China (Grant No. 2022YFB3605000)the National Natural Science Foundation of China (Nos. 62004127, 61725403, 62121005, 61922078, 61827813, and 62004196)+1 种基金the Youth Innovation Promotion Association of Chinese Academy of Sciencesthe Youth Talent Promotion Project of the Chinese Institute of Electronics (No. 2020QNRC001)。
文摘High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to achieve a smooth surface free of hexagonal hillocks on these templates. To address this issue, we investigate the mechanism of compressive stress accumulation during the growth of Al Ga N-based epilayers on HTA-Al N templates using in-situ curvature analysis in this study. To verify the mechanism, a low-Al-content Al Ga N interlayer is introduced between the Al N epilayer and the subsequent Al Ga N epilayer. The larger a-plane lattice constant of this interlayer relative to the Al Ga N epilayer slows the accumulation rate of compressive stress. The hexagonal hillock can be effectively suppressed and the surface of Al Ga N epilayer can be significantly regulated by adopting various low-Al-content Al Ga N interlayers. This work provides a comprehension on the stress accumulation mechanism in Al Ga N epilayers and a feasible method to obtain hillock-free surface of Al Ga N epilayers on HTA-Al N templates,which will be beneficial for fabricating Al Ga N based devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.U23A20358,62474170,61925110,62404214,and 62234007)the University of Science and Technology of China(USTC)Research Funds of the Double First-Class Initiative(Grant No.WK2100000055)+2 种基金the Project of the 46t hResearch Institute of CETC(Grant No.WDZC202446007)the JieBang Headed Project of Changsha City Hunan Province(Grant No.kq2301006)the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS。
文摘The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.
