摘要
采用新的陶瓷工艺技术,在气氛保护条件下,通过固相烧结反应法制备出温差电多晶材料。对膺三元固溶体化合物 P 型(72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3)和 N 型(90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3)的掺杂陶瓷样品进行了性能与结构研究。找到了最佳工艺制度。样品性能参数为:N 型:α=186μV/K σ=1250Ω^(-1)·cm^(-1) λ=14.7mW/(cm.K) Z=2.9×10^(-3)/KP 型:α=220μV/K σ=900 Ω^(-1)·cm^(-1) λ=14.0mW/(cm.K) Z=3.1×10^(-3)
Thermoelectric polycrystal ceramic materials were prepared by a new ceramictechnology.The specimens were sintered by solid reaction in a sealed evacuated quartz tube.The new ceramic cooling materials have a inhomogeneous structure, but higher mechanicalstrength and the thermoelectric properies.The P-type 72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3doped and N-type 90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3 doped were studied.High qualityBi_2Te_3-Sb_2Te_3-Sb_2Se_3 pseudo-ternary solid solution can be prepared under optimum technol-ogy conditions.The polycrystal ceramic materials have a obvious layered structure,but sinter-ing is closer.
关键词
温差电
陶瓷
半导体陶瓷
thermoelectricity
semiconductor refrigeration
ceramic
