摘要
本文对N沟道亚微米器件在不同应力条件下的热载流子退变特性进行了实验研究。实验结果表明:热空穴注入对器件的热载流子退变特性有重要影响。文章对不同应力条件下器件中的热空穴注入与热电子注入的相互作用进行了分析。
An experimental investigation on hot-carrier-induced degradation effects in submicronMOSFETs was performed under different stress conditions. Experimental results show thatthe degradation of devices is dependent on the stress conditions and the degradation effects isenhanced under some stress conditions related to the njection of holes. A hot-carier-induceddegradation mechanism including the injection effects of hot holes was suggested to understand the observed experimental results.
关键词
场效应晶体管
载流子
退变
实验
Charge carriers
Degradation
Semiconductor materials
Stresses
