摘要
本文采用光调制光谱方法测量了GaAs/Ga_(1-x)Al_xAs双单量子阱材料的光调制反射光谱(PR),同时观察到了二个单量子阱中的带间激子跃迁,采用电场调制线形可以拟合出激子跃迁的能量,与简单的有限方势阱模型的计算结果符合。并且由调制反射光谱中的Franz-Keldysh振荡,计算得到材料表面内建电场约为29.3kV/cm。
GaAs/Ga_(1-x)Al_xAs double quantum wells have been studied by photoreflectance measurement.Excitonic transition from two quantum wells was observed at same time. The energy ofexcitonic transition was got by fit the photoreflectivity spectra with electroreflectance lineshape,and coincide with theory result on simple finite square wells model. We also get thesurface builtin electric field F is about 29. 3 kV/cm from the Franz-Keldysh oscillation in thephotoreflectance.
