摘要
我们采用光调制透射方法从In_xGa_(1-x)As/GaAs单量子阱样品测量了调制透射谱,得到了InGaAs量子阱中激子的清晰的调制结构.由电场调制原理对调制透射谱进行拟合,得到了激子的跃迁能量.结果与其他测量以及理论计算结果有较好的一致.
Using the phototransmission spectrum technique, we have measured the phototransmissionspectra from In_xGa_(1-x)As/GaAs single quantum well samples.The clear modulation structureof different excitons in InGaAs well has been got. From the fitting based on the electric field-modulation mechanism,the exciton energies have been obtained which are in good agreementwith other measurements and theoretical calculation.
