摘要
本文把Butcher等提出的计算GaAs异质结磁热功率振荡的理论方法推广用于计算硅反型层的磁热功率。计算中同时计及了磁热功率张量的屏蔽声曳贡献和扩散贡献,采用了重新核实的硅反型层二维电子密度数据,并用电阻张量的实验值取代有较大误差的解析公式。计算结果远优于前人的结果,在振荡位相和幅度两方面都与Oxley等提供的T=5.020K下的最新实验数据定性相符。
The theoretical formalism suggested by Butcher et al.to calculate the magnetothermopowerof GaAs heterojunctions is generalized to deal with the magnetothermopowerof silicon inversion layers. In the calculation, we took account of both screened phonon-dragcontribution and diffusion contribution to magnetothermopower, used the rechecked value oftwo dimensional electron density of the silicon inversion layer and experimental values of resistivitytensor. Our final results are much better than those of the previous one and coincidequalitatively with the new data at the temperature of 5. 020 K offered by Oxley et al., both inthe phases and amplitudes of the oscillations.
基金
国家自然科学基金
关键词
硅
反型层
热功率
量子振荡
Oscillations
Semiconducting gallium arsenide
Semiconductor junctions
Thermoelectricity
