摘要
本文提出一个关于多孔硅发强可见光的物理模型:量子限制效应使多孔硅纳米硅粒中的电子-空穴对能量增高与电子-空穴对通过纳米硅粒以外的发光中心复合而发光。在用阳极氧化刚制备或用HF酸刚处理过的多孔硅中,硅-氢键特别是多硅烷可能是主导的发光中心,而在经过适当氧化处理后发光比较稳定的多孔硅中,发光中心可能是氧化层中的点缺陷或杂质。
Having considered a lot of experimental results of visible luminescence from porous Siand rational points of view of previous physical models, we present a new model for thestrong luminescence of porous Si: Quantum confinement effect increases the energy of electron-holepairs inside nanoscale Si units, and electron-hole pairs recombine to emit lightthrough luminescence centers outside the nanoscale Si units. The new model can qualitativelyexplain many experiments of luminescence of porous Si.
基金
国家自然科学基金
