摘要
首次报道硅／多孔硅异质结光生电压谱，发现多孔硅的激发能有不连续性，表明多孔硅量子点由一层层硅原子有序排列而构成，其尺寸分布是不连续的，其差值为硅晶格常数的整数倍，光生电压谱是研究多孔硅和硅／多孔硅异质结能带结构的有效方法．
Abstract The photovoltage spectra of Silicon/Porous silicon (St/PS) are reported for the first time, and it has been discovered that the excited energy of porous silicon is discreted. It suggests that the quantum dots of porous silicon are composed of ordering layers of silicon atoms and the distribution of the dot radius is discreted. The results prove that photovoltage spectroscopy is an effective way to study the band structure of both porous silicon and St/PS heterojunction.
基金
国家自然科学基金
