摘要
采用质量分离的低能离子束外延(MALE-IBE)技术进行超薄硅外延生长,在600C下获得单晶硅外延层,厚度2000A,过渡区宽度小于500A。有较好的电学性质。
An ultrathin silicon epitaxy growth has been carried out by the Mass-analysed Low EnergyIon Beam Epstaxial technology. (MALE-IBE). We have grown monocrystalline siliconfilms, which are 2000 A in thinkness and less than 500A in transition width. They have goodelectrical properties.
