摘要
分析了光栅单色仪对测量的影响及使用中应注意的问题,用以指导测量半导体激光器镀减反射膜前后的自发辐射谱。通过比较同一电流下的两张谱图,可以在几十纳米的波长范围内确定行波式半导体激光放大器端面的剩余模式反射率,并获得了低于3×10^(-5)的极低反射率。在34Mb/s的速度下,实测行波放大器的光纤至光纤净增益为15dB,放大器自身增益超过25dB。
Effects of the grating monochromator on the measurement of the spectrum from sub-threshold biased semiconductor diodes have been examined. Comparision between spectra obtained with and without AR coatings has led to the establishment of residual reflectivity at the AR coated facet over a wavelength range of tens of nanometers. Results show that a residual reflectivity of lower than 3 × 10^(-5) can be achieved. A fiber-to-fiber gain of 15 dB or amplifier chip gain of larger than 25 dB has been observed from a travelling-wave semiconductor at a bit rate of 34 Mbit/s.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第4期340-350,共11页
Semiconductor Optoelectronics
基金
国家教委回国留学人员基金
四川省科委基金
关键词
光栅单色仪
模式反射
激光放大器
Grating Monochromator
Residual Modal Reflectivity
Travellingwave Semiconductor Laser Amplifier
