摘要
集中讨论 MCT 光导芯片电阻率随时间变化的问题。研究结果表明:MCT芯片中 Hg 原子的逐渐逸出导致了材料组分即 x 值随时间变化,这是芯片室温电阻率变化的主要原因;另外,在某些条件下(如加温),芯片表面可形成高浓度的 n 型载流子薄层,也将引起芯片的室温电阻率的变化。
The instability of resistivity for HgCdTe(MCT)wafers is studied in this paper.It is shown that the instability at room temperature for MCT wafers is caused by gradual release of Hg from MCT.The surface of the wafer may form n- type thin layers with high carrier concentration under such conditions as heating. which is also the cause of the instability of resistivity at room temperature for MCT wafer.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期192-195,共4页
Semiconductor Optoelectronics
