摘要
根据ＨｇＣｄＴｅ 材料的特性和７７Ｋ低温下工作的要求，结合目前研磨抛光的技术水平，从粘接机理和传热学等方面分析计算了粘接界面的最小接触高度、接触热阻和热应力，给出理想粘接界面的模型，介绍了胶层厚度对器件性能的影响，提出选择ＨｇＣｄＴｅ 芯片粘接剂的主要依据和减小粘接界面接触热阻的技术途径。
Based on the analysis on HgCdTe material characteristics, operating temperature of HgCdTe detector and state of the art polish, th minimum contact distance, heat resistance and stress were calculated. The ideal contact model was presented. The detector performance influenced by adhesive thickness was indicated.Technical ways for the decreasing contact heat resistance and main factors of selecting HgCdTe chips adhesive were provided.
出处
《红外技术》
CSCD
北大核心
2000年第1期29-32,共4页
Infrared Technology
