摘要
在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构,用能量赝势法模拟计算出多孔硅的能带间隙.
Basing on the studying on the optical properties of the porous silicon by photoluminescence technology, this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon, puts forward the main luminescence, calculates the band gap of the porous silicon by the empirical pseudopotental method in the end.
出处
《辽宁大学学报（自然科学版）》
CAS
2004年第1期20-22,共3页
Journal of Liaoning University：Natural Sciences Edition
关键词
多孔硅
能带
发光机制
量子限制模型
表面态
能量赝势法
光致发光
porous silicon
photoluminescence
quantum confinement effect surface state
empirical pseudopotential method.
