摘要
用电子束蒸发MoNb的方法,制备了MoNb/SiO_2接触界面。用俄歇电子能谱(AES)测定该界面热处理前后各元素组分随深度的分布。从AES分析中发现:随着热处理温度的上升,MoNb/SiO_2界面中Mo,O渐渐出现再分布峰,形成Mo,O的富集区;Nb的富集区始终为平坦分布,并没有出现Nb的再分布峰。界面宽度由低温的1.5nm变到600℃的15nm;同时还发现600℃时界面呈现电阻性。这一异常现象是由于Mo在SiO_2界面中热稳定性差所导致的。
The contact interface of MoNb/SiO2 was formed by electron beam evapora-tion of MoNb onto the GaAs substrate with SiO2 film. Af ter heat treatment, the profiles of all elements at the interface were obtained using auger electron spectroscopy (AES). With in-creasing temperature of heat treatmeat, redistribution of Mo and O at the MoNb/SiO2 interface was f ound from the AES analysis. Rich Mo region and rich O region existed, while the profile of Nb was flat and its redistribution was not found. The width of the interface changed from 1. 5 nm for lower temperature to 15 nm for 600. Anomalously, the interface appeared resistive at the temperature of 600. It is postulated that this phenomenon arose from the poor thermal stability of Mo in the SiO2 film.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第4期368-373,共6页
Research & Progress of SSE
