摘要
本文介绍一种计算高质量GDa-Si磷掺杂固相效率η(S)的方法。所得的结果是:当掺杂剂气相浓度C(g)等于固相浓度C(S)时,对于C(g)<10^(-4),η(S)是常数,其值为20％,即a-Si薄膜中四配位磷原子密度N(P_4^+)与三配位磷原子密度N(P_3~0)之比是1/4;对于C(g)>10^(-4),、η(S)服从Street定律,其值为10^(-2)～10^(-3)。N(P_4^+)/N(P_3~0)～1/100。P_3~0P_4~0—D之间的热平衡反应常数K～10^(16)cm^(-3)。但是,当C(g)≤10^(-6)时,K可降到10^(16)cm^(-3)。
In this paper we present a method to calculate the phosphorus doping solid-phase efficiency, η(s),of the good-quality GD a-Si by which we have deduced the results as follows: when the dopant gas-phase concentration C(g) equals the solid-phase concentration. C(s) , for C(g)<10-4,η(s)is the constant, ( = 20%) ,i. e. in the film,the ratio between the 4-fold coordination phosphorus density ,N(P4+)and the 3-fold coordination phosphorus density N (P30) is 1 / 4 , for C (g) > 10-4,η(s) follows the Street's law and has a range of 10-2- 10-3,N(P4+)/N(P30) is about 1 /100. The equilibrium reaction constant K between P30 and P4+- D-is of the order of 1016 cm-3. But,for C(g)≤10-6,K may lower to 1015 cm-3.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第1期38-43,共6页
Research & Progress of SSE
关键词
计算
固相效率
非晶硅
磷掺杂
Amorphous Silicon, Phosphorus Doping Solid-Phase Efficiency
